Bulk layer transfer processing with backside silicidation
AssigneeQUALCOMM Incorporated
InventorsSinan GOKTEPELI, George Pete IMTHURN, Stephen Alan FANELLI
Life of this patent
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Abstract
A radio frequency integrated circuit (RFIC) includes a bulk semiconductor die. The RFIC also includes a first active/passive device on a first-side of the bulk semiconductor die, and a first deep trench isolation region extending from the first-side to a second-side opposite the first-side of the bulk semiconductor die. The RFIC also includes a contact layer on the second-side of the bulk semiconductor die. The RFIC further includes a second-side dielectric layer on the contact layer. The first deep trench isolation region may extend through the contact layer and into the second-side dielectric layer.
Claims20
A radio frequency integrated circuit (RFIC), comprising:
- a bulk semiconductor die comprising a first active/passive device on a first-side of the bulk semiconductor die, a first deep trench isolation region extending from the first-side to a second-side opposite the first-side of the bulk semiconductor die;
- a contact layer on the second-side of the bulk semiconductor die;
- and
- a second-side dielectric layer on the contact layer, in which the first deep trench isolation region extends through the contact layer and into the second-side dielectric layer.
A method of constructing a radio frequency (RF) integrated circuit, comprising:
- fabricating a first transistor on a first-side of a bulk semiconductor wafer;
- forming a first deep trench isolation region in the bulk semiconductor wafer, proximate the first transistor;
- depositing a first-side dielectric layer on the first transistor;
- bonding a handle substrate to the first-side dielectric layer;
- exposing the first deep trench isolation region at a second-side of the bulk semiconductor wafer;
- and
- depositing a contact layer on the second-side of the bulk semiconductor wafer and on exposed sidewalls of the first deep trench isolation region.
A radio frequency (RF) front end module, comprising:
- a wireless transceiver, comprising a bulk semiconductor die including a first transistor on a first-side of the bulk semiconductor die, a first deep trench isolation region extending from the first-side to a second-side opposite the first-side of the bulk semiconductor die, a contact layer on the second-side of the bulk semiconductor die, and a second-side dielectric layer on the contact layer, in which the first deep trench isolation region extends through the contact layer and into the second-side dielectric layer;
- and
- an antenna coupled to an output of the wireless transceiver.
Dependencies are inferred from the claim text.