Semiconductor devices, and a Method for Forming a Semiconductor device
AssigneeIntel IP Corporation
InventorsReinhard Mahnkopf, Andreas Wolter, Sonja Koller
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Abstract
A semiconductor device includes a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die. The semiconductor device includes an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die. The semiconductor device includes one or more trench structures extending through the handling layer of the semiconductor die. The one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer of the semiconductor die.
Claims25
A semiconductor device, comprising:
- a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die;
- an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die;
- and
- one or more trench structures extending through the handling layer of the semiconductor die, wherein the one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer of the semiconductor die.
A semiconductor device, comprising:
- a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die;
- an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die;
- and
- one or more trench structures extending into the handling layer from a back side of the semiconductor die, wherein the one or more trench structures are filled with gas or elastic material;
- and
- a cover structure arranged at the back side of the semiconductor die and covering the one or more trench structures.
A method for forming a semiconductor die, the method comprising:
- forming a plurality of circuit regions at a circuit semiconductor layer of a semiconductor die;
- forming one or more trench structures extending through a handling layer of the semiconductor die, wherein the one or more trench structures extends to at least an etch stop layer of the semiconductor die and to at most a circuit semiconductor layer of the semiconductor die,
- wherein the etch stop layer of the semiconductor die is arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die.
Dependencies are inferred from the claim text.