Induced warpage of a thermal conductor
AssigneeIntel Corporation
InventorsJerrod Peterson, David Pidwerbecki
Life of this patent
Estimating the term…
Abstract
Particular embodiments described herein provide for a silicon layer, where the silicon layer includes a profile and a thermal conductor coupled to the silicon layer, where the thermal conductor includes one or more residual stresses. The thermal conductor is modified based on the one or more residual stress such that when pressure is applied to the thermal conductor, a profile of the thermal conductor at least approximately matches the profile of the silicon layer. In an example, the thermal conductor is modified by removing material from one or more areas of the thermal conductor and the thermal conductor is coupled to the silicon layer by one or more pressure inducing mechanisms.
Claims25
An apparatus comprising:
- a silicon layer, wherein the silicon layer includes a profile;
- and
- a thermal conductor coupled to the silicon layer, wherein the thermal conductor includes one or more residual stresses, wherein the thermal conductor is modified based on the one or more residual stress such that when pressure is applied to the thermal conductor, a profile of the thermal conductor at least approximately matches the profile of the silicon layer.
A method comprising:
- determining a profile for a silicon layer;
- identifying one or more residual stresses in a thermal conductor;
- modifying the thermal conductor based on the identified one or more residual stresses such that when pressure is applied to the thermal conductor, a profile of the thermal conductor at least approximately matches the profile of the silicon layer;
- and
- coupling the thermal conductor to the silicon layer.
An integrated circuit (IC) assembly, comprising:
- a substrate;
- a silicon layer above the substrate, wherein the silicon layer includes a profile;
- and
- a thermal conductor coupled to the silicon layer, wherein the thermal conductor includes one or more residual stresses, wherein the thermal conductor is modified based on the one or more residual stress such that when pressure is applied to the thermal conductor, a profile of the thermal conductor at least approximately matches the profile of the silicon layer.
A computing device comprising:
- a processor mounted on a substrate;
- a communications logic unit within the processor;
- a memory in communication with the processor;
- a display on the computing device;
- a battery within the computing device;
- a silicon layer above the substrate, wherein the silicon layer includes a profile;
- and
- a thermal conductor coupled to the silicon layer, wherein the thermal conductor includes one or more residual stresses, wherein the thermal conductor is modified based on the one or more residual stress such that when pressure is applied to the thermal conductor, a profile of the thermal conductor at least approximately matches the profile of the silicon layer.
Dependencies are inferred from the claim text.