Methods of Cutting Metal Gates and Structures formed Thereof

A method comprising:

• forming a gate stack comprising a gate dielectric and a metal gate electrode over the gate dielectric;
• forming an inter-layer dielectric on opposite sides of the gate stack;
• planarizing the gate stack and the inter-layer dielectric;
• forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed;
• selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon;
• and
• etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

A method comprising:

• forming a gate stack comprising a gate dielectric and a metal gate electrode over the gate dielectric;
• forming an inter-layer dielectric on opposite sides of the gate stack;
• planarizing the gate stack and the inter-layer dielectric;
• selectively growing an inhibitor film on the gate stack and not on the inter-layer dielectric;
• and
• selectively depositing a dielectric hard mask on the inter-layer dielectric and not on the inhibitor film.