Semiconductor structure and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, SMIC New Technology Research and Development (Shanghai) Corporation
InventorQing Peng WANG
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Abstract
A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate. The substrate includes an active region and a blank region disposed adjacent to the active region. The method also includes forming a fin material layer on the substrate. Further, the method includes forming a plurality of fins on the active region, and a plurality of dummy fins on the blank region by etching the fin material layer. A spacing between a fin and an adjacent dummy fin is greater than a spacing between adjacent fins.
Claims20
A method for fabricating a semiconductor structure, comprising:
- providing a substrate, wherein the substrate includes an active region and a blank region disposed adjacent to the active region;
- forming a fin material layer on the substrate;
- and
- forming a plurality of fins on the active region, and a plurality of dummy fins on the blank region by etching the fin material layer, wherein a spacing between a fin and an adjacent dummy fin is greater than a spacing between adjacent fins.
A semiconductor structure, comprising:
- a substrate, wherein the substrate includes an active region and a blank region disposed adjacent to the active region;
- a plurality of fins on the active region of the substrate;
- and
- a plurality of dummy fins on the blank region of the substrate, wherein a spacing between a fin and an adjacent dummy fin is greater than a spacing between adjacent fins.
Dependencies are inferred from the claim text.