Fin field-effect transistor device and method of forming the same

A method comprising:

• forming a first gate over a substrate;
• forming a second gate over the substrate and adjacent to the first gate, the first gate and the second gate being embedded in a first dielectric material;
• forming a capping layer on the first gate and on the second gate;
• growing carbon nanotubes on the capping layer;
• forming a second dielectric material over the first dielectric material and around the carbon nanotubes;
• removing the carbon nanotubes and the capping layer to form first recesses in the second dielectric material;
• filling the first recesses with a third dielectric material, thereby forming a first hard mask over the first gate and a second hard mask over the second gate;
• removing a portion of the second dielectric material between the first hard mask and the second hard mask and a portion of the first dielectric material between the first gate and the second gate, thereby forming a second recess;
• and
• filling the second recess with a conductive material.

A semiconductor device comprising:

• a first gate over a substrate;
• first gate spacers along sidewalls of the first gate;
• a second gate over the substrate and adjacent to the first gate;
• second gate spacers along sidewalls of the second gate, the first gate and the second gate being surrounded by a first dielectric material;
• a first capping layer over a first upper surface of the first gate and over a second upper surface of the second gate, the first capping layer and the first dielectric material comprising different materials;
• a second capping layer over the first capping layer, the first capping layer and the second capping layer comprising a same dielectric material, sidewalls of the first capping layer being aligned with respective sidewalls of the second capping layer;
• a second dielectric material over the first dielectric material, the second dielectric material surrounding the first capping layer and the second capping layer;
• and
• an electrically conductive material between the first gate and the second gate, the electrically conductive material extending from a first one of the first gate spacers to a first one of the second gate spacers.