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US 2019/0103310 A1Published application
Interconnect structures
AssigneeGlobalfoundries Inc.
InventorsJim Shih-Chun LIANG, Keith Kwong Hon Wong
Life of this patent
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Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to interconnect structures and methods of manufacture. The structure includes a metallization feature comprising a fill material and formed within a dielectric layer; at least one cap covering the fill material of the metallization feature, the at least one cap is comprised of a material different than the fill material of the metallization feature; and an interconnect structure in electrical contact with the metallization feature.
Claims21
A structure, comprising:
- a metallization feature comprising a barrier material, a liner on the barrier material and a fill material all formed within a dielectric layer;
- at least one cap covering the fill material of the metallization feature, the at least one cap is comprised of a material different than the fill material of the metallization feature;
- and
- an interconnect structure in electrical contact with the metallization feature.
1 more element
A structure, comprising:
- a metallization feature formed within a lined trench of a dielectric layer and comprising a fill material;
- a first cap covering the fill material;
- a film directly over the first cap and the fill material of the metallization feature;
- a liner layer lining sides of the first cap and separating the first cap from the fill material to lock the first cap in place with the film;
- an interconnect structure in electrical contact with the metallization feature;
- and
- a second cap covering the interconnect structure and comprised of a material different than the fill material of the interconnect structure.
4 more elements
-20. (canceled)
Dependencies are inferred from the claim text.