Semiconductor Devices and Methods of Forming

A method, comprising:

• patterning a first dielectric layer to form a first recess and a second recess;
• depositing a first layer in the first recess and the second recess, wherein the first layer extends along an upper surface of the first dielectric layer between the first recess and the second recess, and wherein an upper surface of the first layer comprises a peak and a valley;
• depositing a second layer over the first layer;
• performing a first chemical mechanical polish (CMP) process, wherein the first CMP process terminates upon detection of the peak of the upper surface of the first layer;
• performing a second CMP process on the first layer, wherein the second CMP process terminates after a first predetermined time;
• and
• performing a third CMP process on the first layer, wherein the third CMP process terminates after a second predetermined time.

A semiconductor device, comprising:

• a substrate;
• a dielectric layer over the substrate;
• a first conductive feature in the dielectric layer, the first conductive feature comprising a first number of material layers;
• a second conductive feature in the dielectric layer adjacent to the first conductive feature, the second conductive feature comprising a second number of material layers, wherein the second number is higher than the first number;
• and
• an electrical connector overlying the first conductive feature and/or the second conductive feature.