Method for forming vias and method for forming contacts in vias

A method for forming openings in a first underlayer, the method comprising:

• forming openings in a second underlayer disposed on a first underlayer;
• applying a liquid layer to cover the second underlayer and fill the openings in the second underlayer;
• converting the liquid layer to an organic layer in a solid form;
• removing a portion of the organic layer on a level above the second underlayer;
• removing the second underlayer between a remaining portion of the organic layer and leaving the remaining portion of the organic layer, so as to partially expose portions of the first underlayer;
• forming the openings in the first underlayer by using the remaining portion of the organic layer as an etching mask;
• and
• removing the remaining portion of the organic layer.

A method for forming contacts in a dielectric layer, the method comprising:

• forming a photoresist layer on the dielectric layer formed on a substrate;
• exposing the photoresist layer;
• forming photoresist patterns by developing the exposed photoresist layer with a development solution, the photoresist patterns covering regions of the dielectric layer in which the openings are to be formed;
• forming a liquid layer coated over the photoresist patterns;
• converting the liquid layer to an organic layer in a solid form;
• removing a portion of the organic layer on a level above the photoresist patterns;
• removing the photoresist patterns and leaving a remaining portion of the organic layer, so as to partially expose portions of the dielectric layer;
• forming openings in the dielectric layer by using the remaining portion of the organic layer as an etching mask;
• removing the remaining portion of the organic layer;
• and
• forming the contacts in the openings of the dielectric layer.