Metal Routing with Flexible Space Formed Using Self-Aligned Spacer Patterning
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHsiang-Wei Liu, Chia-Tien Wu, Wei-Chen Chu
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Abstract
A method includes forming a hard mask over a target layer, performing a treatment on a first portion of the hard mask to form a treated portion, with a second portion of the hard mask left untreated as an untreated portion. The method further includes subjecting both the treated portion and the untreated portion of the hard mask to etching, in which the untreated portion is removed as a result of the etching, and the treated portion remains after the etching. A layer underlying the hard mask is etched, and the treated portion of the hard mask is used as a part of an etching mask in the etching.
Claims20
A method comprising:
- forming a first hard mask over a target layer;
- performing a treatment on a first portion of the first hard mask to form a treated portion, with a second portion of the first hard mask left untreated as an untreated portion;
- subjecting both the treated portion and the untreated portion of the first hard mask to etching, wherein the untreated portion is removed as a result of the etching, and the treated portion remains after the etching;
- and
- etching a layer underlying the first hard mask, wherein the treated portion of the first hard mask is used as a part of an etching mask in the etching.
A method comprising:
- forming a first hard mask;
- forming a second hard mask over the first hard mask;
- patterning the second hard mask to form a first opening therein;
- modifying a first portion of the second hard mask to have properties different from a second portion of the second hard mask;
- forming a spacer on a sidewall of the first portion of the second hard mask;
- removing the second portion of the second hard mask, with the first portion of the second hard mask remaining after the removing;
- and
- transferring patterns of the first portion of the second hard mask and the spacer into an underlying layer.
A method comprising:
- forming a first opening, a second opening, a third opening, and a fourth opening in a hard mask;
- forming a treatment mask covering a first portion of the hard mask between the first opening and the second opening, wherein a second portion of the hard mask between the third opening and the fourth opening is exposed through an opening in the treatment mask;
- performing a treatment on the second portion of the hard mask;
- removing the treatment mask;
- forming spacers in the first opening, the second opening, the third opening, and the fourth opening;
- exposing both the first portion and the second portion of the hard mask to an etchant, wherein the first portion is etched by the etchant, and the second portion has at least a bottom portion remaining;
- and
- using the spacers and the second portion of the hard mask as an etching mask to etch an underlying layer.
Dependencies are inferred from the claim text.