Dummy fin structures and methods of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChin-Hsiang Lin, Keng-Chu Lin, Shwang-Ming Jeng, Teng-Chun Tsai, Tsu-Hsiu Perng, Fu-Ting Yen
Life of this patent
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Abstract
An embodiment method includes depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate. The method further includes depositing a dielectric material over the first dielectric film; recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material; and forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.
Claims20
A method comprising:
- depositing a first dielectric film over and along sidewalls of a semiconductor fin, the semiconductor fin extending upwards from a semiconductor substrate;
- depositing a dielectric material over the first dielectric film;
- recessing the first dielectric film below a top surface of the semiconductor fin to define a dummy fin, the dummy fin comprising an upper portion of the dielectric material;
- and
- forming a gate stack over and along sidewalls of the semiconductor fin and the dummy fin.
A device comprising:
- a first semiconductor fin and a second semiconductor fin extending upwards from a semiconductor substrate;
- an isolation region comprising a first dielectric film and disposed between the first semiconductor fin and the second semiconductor fin;
- a dummy fin extending upwards from the isolation region, wherein the dummy fin comprises a first dielectric material extending from below a topmost surface of the first dielectric film to above the topmost surface of the first dielectric film;
- and
- a gate stack disposed over and extending along sidewalls of the first semiconductor fin, over and along sidewalls of the second semiconductor fin, and over and along sidewalls of the dummy fin.
A method comprising:
- depositing a first dielectric film over and along sidewalls of a plurality of semiconductor fins;
- depositing a dielectric material over the first dielectric film, wherein the dielectric material comprises carbon, metal, or a combination thereof, and wherein the dielectric material is deposited between each of the plurality of semiconductor fins;
- planarizing the dielectric material to expose the first dielectric film;
- etching the first dielectric film using an etchant that etches the first dielectric film at a faster rate than the dielectric material, wherein etching the first dielectric film defines a plurality of dummy fins extending above a top surface of the first dielectric film, and wherein the plurality of dummy fins comprises at least a portion of the dielectric material;
- and
- forming a gate stack over and along sidewalls of the plurality of semiconductor fins and over and along sidewalls of the plurality of dummy fins.
Dependencies are inferred from the claim text.