Selective deposition of aluminum and nitrogen containing material
AssigneeASM IP Holding B.V.
InventorsHan Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen, Krzysztof Kachel, Harald Profijt
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Abstract
Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
Claims21
(canceled)
A process for selectively forming AlN on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising:
- selectively depositing AlN on the first surface relative to the second different surface of the substrate by one or more selective deposition sub-cycles;
- etching the deposited AlN by one or more thermal etching sub-cycles;
- wherein AlN is selectively formed on the first surface of the substrate relative to the second different surface of the substrate with a selectivity greater than about 99%.
Dependencies are inferred from the claim text.