Semiconductor device, method for producing the same, and laminate
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsHiroyuki Yasuda, Michihiro Sugo
Life of this patent
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Abstract
Disclosed herein is a semiconductor device including: a support; a double-layered adhesive resin layer formed on the support, an insulating layer and a redistribution layer formed on the adhesive resin layer; a chip layer, and a mold resin layer, wherein the adhesive resin layer includes a resin layer A containing a resin decomposable by light irradiation and a resin layer B containing a non-silicone-based thermoplastic resin, the resin layer A and the resin layer B being provided in this order from the support side, the resin decomposable by light irradiation is a resin containing a fused ring in its main chain, and the non-silicone-based thermoplastic resin has a glass transition temperature of 200° C. or higher.
Claims6
A semiconductor device comprising:
- a support;
- a double-layered adhesive resin layer formed on the support, an insulating layer and a redistribution layer formed on the adhesive resin layer;
- a chip layer, and a mold resin layer, wherein the adhesive resin layer comprises a resin layer A containing a resin decomposable by light irradiation and a resin layer B containing a non-silicone-based thermoplastic resin, the resin layer A and the resin layer B being provided in this order from the support side, the resin decomposable by light irradiation is a resin containing a fused ring in its main chain, and the non-silicone-based thermoplastic resin has a glass transition temperature of 200° C. or higher.
A laminate comprising:
- a support;
- a double-layered adhesive resin layer formed on the support, an insulating layer formed on the adhesive resin layer;
- and a plating resist layer, wherein
- the adhesive resin layer comprises a resin layer A containing a resin decomposable by light irradiation and a resin layer B containing a non-silicone-based thermoplastic resin, the resin layer A and the resin layer B being provided in this order from the support side, the resin decomposable by light irradiation is a resin containing a fused ring in its main chain, and the non-silicone-based thermoplastic resin has a glass transition temperature of 200° C. or higher.
Dependencies are inferred from the claim text.