Back to results
US 2019/0103287 A1Published application
Copper plasma etching method and manufacturing method of display panel
AssigneesSamsung Display Co., Ltd., Korea University Research and Business Foundation, Sejong Campus
InventorsSang Gab KIM, MunPyo HONG, Hyun Min CHO, Seong Yong KWON, Ho Won YOON
Life of this patent
Estimating the term…
Abstract
A copper plasma etching method according an exemplary embodiment includes: placing a substrate on a susceptor in a process chamber of a plasma etching apparatus; supplying an etching gas that include hydrogen chloride into the process chamber; plasma-etching a conductor layer that include copper in the substrate; and maintaining a temperature of the susceptor at 10° C. or less during the plasma-etching.
Claims20
A copper plasma etching method comprising:
- placing a substrate comprising a conductive layer that comprises copper on a susceptor in a process chamber of a plasma etching apparatus;
- supplying an etching gas that comprises hydrogen chloride into the process chamber;
- plasma-etching the conductive layer that comprises copper on the substrate;
- and
- maintaining a temperature of the susceptor at about 10° C. or less during the plasma-etching.
2 more elements
A display panel manufacturing method comprising:
- forming a conductive layer that comprises copper on a substrate;
- placing the substrate on which the conductive layer is formed on a susceptor in a process chamber of a plasma etching apparatus;
- supplying an etching gas that comprises hydrogen chloride into the process chamber;
- plasma-etching the conductive layer;
- and
- maintaining a temperature of the susceptor at about 10° C. or less during the plasma-etching.
3 more elements
Dependencies are inferred from the claim text.