Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
AssigneeVersum Materials US, LLC
InventorsJhih Kuei Ge, Yi-Chia Lee, Wen Dar Liu, Chi-Hsien Kuo, Andrew J. Adamczyk
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Abstract
Described herein is an etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises: water; an oxidizer; a buffer composition comprising an amine compound (or ammonium compound) and a polyfunctional organic acid; a water-miscible solvent; and a fluoride ion source.
Claims22
An etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises:
- water;
- an oxidizer;
- a buffer composition comprising an amine compound and a polyfunctional organic acid;
- a water-miscible solvent;
- and
- a fluoride ion source.
An etching solution suitable for the simultaneous removal of silicon and silicon-germanium from a microelectronic device, which comprises:
- water;
- amine;
- oxidizer;
- buffer composition comprising an ammonium compound and a polyfunctional organic acid;
- water-miscible solvent;
- and
- fluoride ion source.
A method for simultaneously etching silicon and silicon-germanium from a microelectronic device comprising silicon and silicon-germanium, the method comprising the steps of:
- contacting the microelectronic device comprising silicon and silicon-germanium with an etching solution comprising water;
- an oxidizer;
- a buffer composition comprising an amine compound and a polyfunctional organic acid;
- a water-miscible solvent;
- and a fluoride ion source;
- and
- rinsing the microelectronic device after the silicon and silicon-germanium are at least partially removed, wherein the etch rate for silicon relative to silicon-germanium is from about 3:1 to 1:3.
A method for simultaneously etching silicon and silicon-germanium from a microelectronic device comprising silicon and silicon-germanium, the method comprising the steps of:
- contacting the microelectronic device comprising silicon and silicon-germanium with an etching solution comprising water;
- an oxidizer;
- an amine;
- a buffer composition comprising an ammonium compound and a polyfunctional organic acid;
- a water-miscible solvent;
- and a fluoride ion source;
- and
- rinsing the microelectronic device after the silicon and silicon-germanium are at least partially removed, wherein the etch rate for silicon relative to silicon-germanium is from about 3:1 to 1:3.
Dependencies are inferred from the claim text.