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US 2019/0103281 A1Published application
Method for forming features of semiconductor structure having reduced end-to-end spacing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsXi-Zong Chen, Yun-Yu Hsieh, Cha-Hsin Chao, Li-Te Hsu
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Abstract
A method includes forming a mask layer over a target layer. A first etching process is performed on the mask layer to form a first opening and a second opening in the mask layer. A second etching process is performed on the mask layer to reduce an end-to-end spacing between the first opening and the second opening. The first etching process and the second etching process have different anisotropy properties. A pattern of the mask layer is transferred to the target layer.
Claims20
A method comprising:
- forming a mask layer over a target layer;
- performing a first etching process on the mask layer to form a first opening and a second opening in the mask layer;
- performing a second etching process on the mask layer to reduce an end-to-end spacing between the first opening and the second opening, the first etching process and the second etching process having different anisotropy properties;
- and
- transferring a pattern of the mask layer to the target layer.
2 more elements
A method comprising:
- forming a mask layer over a target layer;
- performing a first etching process on the mask layer to form a first opening and a second opening in the mask layer, the first etching process being isotropic in a first plane parallel to a top surface of the target layer, the first opening and the second opening having a first end-to-end spacing;
- performing a second etching process on the mask layer to form an enlarged first opening and an enlarged second opening in the mask layer, the second etching process being anisotropic in the first plane parallel to the top surface of the target layer, the enlarged first opening and the enlarged second opening having a second end-to-end spacing, the first end-to-end spacing being different from the second end-to-end spacing;
- and
- etching the target layer using the mask layer as an etch mask.
2 more elements
A method comprising:
- forming a first mask layer over a target layer;
- patterning the first mask layer to form a first opening in the first mask layer;
- forming a second mask layer over the first mask layer and in the first opening;
- performing a first implantation process on the second mask layer to form a first doped region in the second mask layer, the first doped region having a first width;
- performing a second implantation process on the second mask layer to form a second doped region in the second mask layer, the second doped region being above the first doped region, the second doped region having a second width, the second width being different from the first width;
- selectively removing undoped regions of the second mask layer, the first doped region and the second doped region of the second mask layer forming a cut feature, the cut feature cutting the first opening into two separate second openings;
- and
- patterning the target layer using the first mask layer and the cut feature as a combined mask.
5 more elements
Dependencies are inferred from the claim text.