Surface treatment of carbon containing films using organic radicals
AssigneeMattson Technology, Inc.
InventorsMichael X. Yang, Hua Chung, Xinliang Lu
Life of this patent
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Abstract
Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).
Claims26
A method for processing a workpiece, the workpiece comprising a semiconductor material and a carbon containing layer, the method comprising performing a surface treatment process on the carbon containing layer, the surface treatment process comprising:
- generating one or more species using a plasma induced in a first chamber;
- filtering the one or more species generated by the plasma to create a first mixture;
- injecting one or more hydrocarbon molecules into the first mixture post filtering to create a second mixture, the second mixture comprising one or more organic radicals;
- and
- exposing the carbon containing layer to the second mixture in a second chamber
- wherein the one or more species generated by the plasma to create the first mixture is filtered by a separation grid separating the first chamber from the second chamber;
- wherein the separation grid comprises a first grid plate and a second grid plate, the first gird plate is configured to filter the one or more species to create the first mixture, wherein the second mixture passes through the second grid plate for exposure to the carbon containing layer, wherein the one or more hydrocarbon molecules are injected into the first mixture post filtering by a gas injection source that is located between the first grid plate and the second grid plate.
A method of processing a semiconductor workpiece, the method comprising:
- performing an organic radical based surface treatment process on a workpiece to modify a surface wetting angle of a workpiece layer on the workpiece;
- subsequent to performing the organic radical based surface treatment process, depositing a coating material on the workpiece layer;
- wherein the organic radical based surface treatment process comprises:
- generating one or more species using a plasma induced in a first chamber;
- filtering the one or more species generated by the plasma to create a first mixture;
- injecting one or more hydrocarbon molecules into the first mixture post filtering to create a second mixture, the second mixture comprising one or more organic radicals;
- and
- exposing the workpiece layer to the second mixture in a second chamber
- wherein the one or more species generated by the plasma to create the first mixture is filtered by a separation grid separating the first chamber from the second chamber;
- wherein the separation grid comprises a first grid plate and a second grid plate, the first gird plate is configured to filter the one or more species to create the first mixture, the second mixture passes through the second grid plate for exposure to the carbon containing layer, wherein the one or more hydrocarbon molecules are injected into the first mixture post filtering by a gas injection source that is located between the first grid plate and the second grid plate.
26-29. (canceled)
Dependencies are inferred from the claim text.