Selective deposition of metal silicides

A substrate processing method, comprising:

• exposing a silicon containing substrate comprising bulk silicon oxide and native silicon oxide to a plasma formed from an NF3 precursor and an NH3 precursor to selectively remove the native silicon oxide from the substrate, the exposing comprising:
• heating the substrate to a temperature of between about 40° C. and about 50° C.;
• and
• exposing the substrate to the plasma for a period of time less than about 40 seconds;
• heating a substrate to a first temperature;
• exposing the substrate to a plasma comprising hydrogen;
• exposing the substrate to a first dosage of a MoF6 precursor;
• exposing the substrate to a second dosage of a Si2H6 precursor;
• sequentially cycling the exposing the substrate to a first dosage and the exposing the substrate to a second dosage;
• and
• after the sequential cycling, exposing the substrate to a third dosage of the Si2H6 precursor.

A substrate processing method, comprising:

• positioning a silicon containing comprising bulk silicon oxide and native silicon oxide substrate on a heater in a reaction chamber having chamber walls;
• exposing the substrate to a plasma formed from an NF3 precursor and an NH3 precursor to selectively remove the native silicon oxide from the substrate, the exposing comprising:
• heating the substrate to a temperature of between about 40° C. and about 50° C.;
• and
• exposing the substrate to the plasma for a period of time less than about 40 seconds;
• heating the substrate on the heater to a first temperature;
• maintaining the chamber walls at a second temperature less than the first temperature;
• exposing a silicon containing surface of the substrate to hydrogen;
• exposing the substrate to a first dosage of a MoF6 precursor;
• exposing the substrate to a second dosage of a Si2H6 precursor;
• sequentially cycling the exposing the substrate to a first dosage and the exposing the substrate to a second dosage;
• and
• after the sequential cycling, exposing the substrate to a third dosage of the Si2H6 precursor.