Phosphorus or arsenic ion implantation utilizing enhanced source techniques
AssigneeEntegris, Inc.
InventorsOleg Byl, Sharad N. Yedave, Joseph D. Sweeney, Barry Lewis Chambers, Ying Tang
Life of this patent
Estimating the term…
Abstract
Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphor-us-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.
Claims17
1-35. (canceled)
An ion implantation system, comprising:
- an ion implanter comprising an ion source chamber;
- and
- a gas supply assembly comprising one or more gas supply vessels arranged to supply a mixture of gases to the ion implanter, wherein the mixture of gases comprises one of (i)-(viii):
- (i) PH3 and PF3, wherein the concentration of PH3 is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases;
- (ii) PH3 and PF5, wherein the concentration of PH3 is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases;
- (iii) PFx and H2, wherein x has any stoichiometric acceptable value, and wherein the concentration of H2 does not exceed 50% by volume, based on the total volume of the mixture of gases;
- (iv) PFx, PH3, H2, and inert gas, wherein x has any stoichiometric acceptable value;
- (v) AsH3 and AsF3, wherein the concentration of AsH3 is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases;
- (vi) AsH3 and AsF5, wherein the concentration of AsH3 is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases;
- (vii) AsFx and H2, wherein x has any stoichiometric acceptable value, and wherein the concentration of H2 does not exceed 50% by volume, based on the total volume of the mixture of gases;
- and (viii) AsFx, AsH3, H2, and inert gas, wherein x has any stoichiometric acceptable value.
(canceled)
A method of enhancing performance of an ion implanter, comprising delivering to an ion source chamber thereof a gas mixture selected from among (i)-(viii):
- (i) PH3 and PF3, wherein the concentration of PH3 is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases;
- (ii) PH3 and PF5, wherein the concentration of PH3 is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases;
- (iii) PFx and H2, wherein x has any stoichiometric acceptable value, and wherein the concentration of H2 does not exceed 50% by volume, based on the total volume of the mixture of gases;
- (iv) PFx, PH3, H2, and inert gas, wherein x has any stoichiometric acceptable value;
- (v) AsH3 and AsF3, wherein the concentration of AsH3 is in a range of from 40% to 60% by volume, based on the total volume of the mixture of gases;
- (vi) AsH3 and AsF5, wherein the concentration of AsH3 is in a range of from 50% to 75% by volume, based on the total volume of the mixture of gases;
- (vii) AsFx and H2, wherein x has any stoichiometric acceptable value, and wherein the concentration of H2 does not exceed 50% by volume, based on the total volume of the mixture of gases;
- and (viii) AsFx, AsH3, H2, and inert gas, wherein x has any stoichiometric acceptable value.
Dependencies are inferred from the claim text.