Method for Producing Group III Nitride Laminate
AssigneeStanley Electric Co., Ltd.
InventorHiroshi Furuya
Life of this patent
Estimating the term…
Abstract
A method for producing a group III nitride laminate by growing a layer containing a group III nitride single crystal represented by AlXInYGaZN, where X, Y, and Z in the composition formula satisfy relation of X+Y+Z=1.0, 0.8≤X<1.0, 0.0≤Y<0.2, and 0.0<Z≤0.2, on main surface of a base substrate having at least one main surface including an aluminum nitride single crystal layer, in which a V/III ratio representing a molar ratio of a nitrogen source gas to a group III raw material gas which are used for growing the layer containing the group III nitride single crystal is 5000 or more and 15000 or less.
Claims9
A method for producing a group III nitride laminate by supplying a group III raw material gas and a nitrogen source gas onto main surface of a base substrate having at least one main surface including an aluminum nitride single crystal layer and growing a layer containing a group III nitride single crystal represented by AlXInYGaZN, where X, Y, and Z in the composition formula satisfy relation of X+Y+Z=1.0, 0.8≤X<1.0, 0.0≤Y<0.2, and 0.0<Z≤0.2, wherein
- a V/III ratio representing a molar ratio of the nitrogen source gas to the group III raw material gas is set to 5000 or more and 15000 or less.
Dependencies are inferred from the claim text.