Method for Manufacturing a Semiconductor Device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Lin Tsai, Jung-Hau Shiu, Ching-Yu Chang, Jen Hung Wang, Shing-Chyang Pan, Tze-Liang Lee
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Abstract
A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- placing a substrate in a deposition chamber;
- depositing a layer over the substrate;
- and
- depositing an oxide layer over the layer, comprising:
- flowing first precursor materials into the deposition chamber;
- within the deposition chamber, forming a portion of the oxide layer from the first precursor materials;
- igniting second precursor materials into a plasma, the second precursor materials being free of allotropes of oxygen;
- and
- within the deposition chamber, forming a portion of the oxide layer from the plasma.
A method of manufacturing a semiconductor device, the method comprising:
- depositing a dielectric layer over a substrate;
- performing a first patterning to form a recess in the dielectric layer;
- and
- depositing an oxide film over and contacting the dielectric layer and within the recess in the dielectric layer, wherein the oxide film is formed from a plurality of precursors, wherein the precursors of the plurality of precursors are free of O2, and wherein depositing the oxide film comprises forming a plasma of a first precursor of the plurality of precursors.
A method comprising:
- forming a dielectric layer over a semiconductor substrate;
- patterning a photoresist over the dielectric layer;
- placing the semiconductor substrate and the photoresist into a process chamber;
- transferring the pattern of the photoresist to the dielectric layer using an etching process;
- sequentially providing precursors of a plurality of precursors to the process chamber, wherein the precursors of the plurality of precursors are free of allotropes of oxygen;
- and
- forming an oxide layer over and contacting the dielectric layer within the process chamber, comprising igniting at least one precursor of the plurality of precursors into a plasma.
Dependencies are inferred from the claim text.