Semiconductor substrate and method of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsI-Sheng CHEN, Tzu-Chiang CHEN, Cheng-Hsien WU
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Abstract
A semiconductor substrate includes a first material layer made of a first material and including a plurality of protrusions, and a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions. Each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other,
Claims20
A semiconductor substrate, comprising:
- a first material layer made of a first material and including a plurality of protrusions, wherein each of the protrusions includes a tip and a plurality of facets converging at the tip, and adjacent facets of adjacent protrusions are in contact with each other;
- and
- a second material layer made of a second material different from the first material, filling spaces between the plurality of protrusions, and covering the plurality of protrusions.
A semiconductor substrate, comprising:
- a first material layer made of a first material and including a plurality of cavities, wherein each of the cavities has a reverse-pyramid shape and a plurality of facets converging at a bottom of the reverse-pyramid shape, and adjacent cavities are separated from each other by an insulating layer embedded in the first material layer;
- and
- a second material layer made of a second material different from the first material, filling the plurality of cavities, and covering the insulating layer.
A method for manufacturing a semiconductor substrate, the method comprising:
- forming an etching mask layer in or on a first material layer, wherein the first material layer has a first crystallographic plane exteriorly exposed;
- performing an anisotropic etching process to etch portions of the first material layer not covered by the etching mask layer so as to remove the exteriorly exposed first crystallographic plane, such that the first material layer provides a plurality of second crystallographic planes exposed by the anisotropic etching process;
- and
- forming, on the plurality of second crystallographic planes of the first material layer, a second material having a lattice constant different from that of the first material layer.
Dependencies are inferred from the claim text.