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AssigneeASM International N.V.
InventorsRaija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
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A vapor deposition process for depositing an antimony oxide thin film comprising alternately and sequentially contacting a substrate in a reaction chamber with a vapor phase antimony source and a vapor phase oxygen source, wherein the antimony oxide thin film can be etched selectively relative to SiO2, Si, or Al2O3 in a wet etch comprising concentrated HCl, H2O2, or tartaric acid, or relative to SiN or SiO2 in a dry etch comprising Cl-containing plasma, F-containing plasma, Cl2-plasma, or a mixture of CHF3 and Cl2-plasma.
Dependencies are inferred from the claim text.