Back to results
US 2019/0103254 A1Published application
Ultra-localized and plasma uniformity control in a fabrication process
AssigneeTokyo Electron Limited
InventorsBarton G. Lane, Peter L. G. Ventzek
Life of this patent
Estimating the term…
Abstract
Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.
Claims23
An apparatus for generating plasma in a plasma processing system, comprising:
- an array of structures, wherein each structure includes:
- an inductive (L) component;
- and
- a capacitive (C) component, wherein the inductive and capacitive components form a resonant circuit;
- and
- a power supply coupled to the array, the power supply being configured to power the resonant circuit at or near a resonant frequency of one or more of the structures.
3 more elements
A method of a plasma process comprising:
- providing one or more process gases to a plasma chamber, the plasma chamber comprising an array of structures disposed within a plasma chamber, each structure including a capacitive (C) component and an inductive (L) component that form a resonant circuit;
- providing an oscillating current from a power source to the array of structures, wherein the providing of the oscillating current charges the capacitive (C) component at a resonant frequency to create an electric field proximate to the capacitive component (C), the electric field induces a magnetic field proximate to the inductive (L) component;
- and
- igniting a plasma state within the one or more process gases proximate to the electric fields or the magnetic fields associated with the structures.
1 more element
Dependencies are inferred from the claim text.