Capacitor structures
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsWen-Long LU, Chi-Chang LEE
Life of this patent
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Abstract
A capacitor structure is disclosed. The capacitor structure includes a substrate, and a first electrode disposed on the substrate, the first electrode including a conductive layer, a first conductive post electrically connected to the conductive layer and a second conductive post electrically connected to the conductive layer. The capacitor structure further includes a planarization layer disposed on and covering the first electrode, the planarization layer disposed in a space between the first conductive post and the second conductive post, a first dielectric layer disposed on the planarization layer and in the space between the first conductive post and the second conductive post, and a second electrode disposed on the first dielectric layer.
Claims23
A capacitor structure, comprising:
- a substrate;
- a first electrode disposed on the substrate, the first electrode comprising a conductive layer, a first conductive post electrically connected to the conductive layer and a second conductive post electrically connected to the conductive layer;
- a planarization layer disposed on and covering the first electrode, the planarization layer disposed in a space between the first conductive post and the second conductive post;
- a first dielectric layer disposed on the planarization layer and in the space between the first conductive post and the second conductive post;
- and
- a second electrode disposed on the first dielectric layer.
A capacitor structure, comprising:
- a substrate;
- a first electrode disposed on the substrate, the first electrode comprising a conductive layer and a plurality of conductive posts;
- a first dielectric layer disposed on the first electrode, at least a portion of the first dielectric layer surrounded by the plurality of conductive posts;
- a second electrode disposed on the first dielectric layer;
- a second dielectric layer disposed on the second electrode;
- a third electrode disposed on the second dielectric layer;
- a first conductive contact electrically connected to the first and third electrodes;
- and
- a second conductive contact electrically connected to the second electrode.
A capacitor structure, comprising:
- a first dielectric layer;
- a first conductive layer disposed on the first dielectric layer, at least a portion of the first conductive layer surrounded by the first dielectric layer;
- and
- a second dielectric layer disposed on the first conductive layer, at least a portion of the second dielectric layer surrounded by the first conductive layer.
A method of forming a capacitor structure, comprising:
- providing a substrate;
- forming a first electrode on the substrate, the first electrode comprising a conductive layer and a plurality of conductive posts disposed on and electrically connected to the conductive layer, the plurality of conductive posts defining at least one first recess having one or more sidewalls and a bottom surface;
- forming a planarization layer overlying the first electrode and covering the one or more sidewalls and the bottom surface of the at least one first recess;
- forming a first dielectric layer overlying the planarization layer;
- and
- forming a second electrode overlying the first dielectric layer.
Dependencies are inferred from the claim text.