Multilayer electronic component and method of manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsSeung Hun HAN, Sung Min CHO, Dong Joon OH
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Abstract
A multilayer electronic component includes: a capacitor body including first and second internal electrodes disposed to be alternately exposed through opposite surfaces, respectively, with respective dielectric layers interposed therebetween; first and second thin film layers including at least one of titanium nitride (TiN), ruthenium (Ru), platinum (Pt), iridium (Ir), or titanium (Ti), disposed on the surfaces of the capacitor body, and connected to the first and second internal electrodes, respectively; and first and second external electrodes formed on the first and second thin film layers. A thickness of the first or second thin film layer is less than or equal to 60 nm.
Claims13
A multilayer electronic component comprising:
- a capacitor body including first and second surfaces facing each other, third and fourth surfaces connected to the first and second surfaces and facing each other, and fifth and sixth surfaces connected to the first and second surfaces, connected to the third and fourth surfaces, and facing each other, and including first and second internal electrodes disposed to be alternately exposed through the third and fourth surfaces, respectively, with respective dielectric layers interposed therebetween;
- first and second thin film layers including at least one of titanium nitride (TiN), ruthenium (Ru), platinum (Pt), iridium (Ir), or titanium (Ti), disposed on the third and fourth surfaces of the capacitor body, and connected to the first and second internal electrodes, respectively;
- and
- first and second external electrodes formed on the first and second thin film layers, respectively,
- wherein a thickness of the first or second thin film layer is less than or equal to 60 nm.
A method of manufacturing a multilayer electronic component, the method comprising:
- coating a material including at least one of titanium nitride (TiN), ruthenium (Ru), platinum (Pt), iridium (Ir), or titanium (Ti) using a thin film atomic layer deposition (ALD) process on an outer surface of a capacitor body to form a seed layer and sintering the seed layer;
- forming a conductive layer on a surface of the seed layer using a plating process;
- forming a polymer layer to cover opposite end portions of the capacitor body in a length direction;
- etching a portion of the conductive layer, not covered by the polymer layer, to form first and second external electrodes that are spaced apart from each other;
- removing the seed layer formed on a portion of the capacitor body, not covered by the first and second external electrodes, to form first and second thin film layers, spaced apart from each other;
- and
- removing the polymer layer,
- wherein a thickness of the first or second thin film layer is less than or equal to 60 nm.
Dependencies are inferred from the claim text.