Resuming storage die programming after power loss

A method for resuming programming after a power loss, comprising:

• in response to receipt of an indication of the power loss,
• copying data that was to be programmed to multi-level cell NAND blocks to single level cell NAND blocks;
• and
• storing a pulse number of a pulse at which programming was interrupted, wherein the programming applies a plurality of pulses that are each associated with a pulse number;
• and
• in response to receipt of an indication to resume from the power loss,
• copying the data from the single level cell NAND blocks to a page buffer;
• retrieving the pulse number;
• and
• resuming programming of the multi-level cell NAND blocks at a lower pulse number than the retrieved pulse number using the data in the page buffer to account for charge loss.

An apparatus that is able to resume programming after a power loss, comprising:

• a storage die comprising single level cell NAND blocks and multi-level cell NAND blocks;
• and
• a storage die controller to:
• in response to receipt of an indication to resume from the power loss,
• copy data for programming the multi-level cell NAND blocks from the single level cell NAND blocks to a page buffer;
• compare threshold voltages of memory cells of a wordline whose programming was interrupted against verify levels;
• select a highest level that was programmed before the power loss;
• calculate a pulse number based on the highest level found in a lookup table;
• and
• resume programming of the multi-level cell NAND blocks at the calculated pulse number using the data.

A method for resuming programming after a power loss, comprising:

• in response to receipt of an indication to resume from the power loss,
• copying data for programming multi-level cell NAND blocks from single level cell NAND blocks to a page buffer;
• comparing threshold voltages of memory cells of a wordline whose programming was interrupted against verify levels;
• selecting a highest level that was programmed before the power loss;
• calculating a pulse number based on the highest level found in a lookup table;
• and
• resuming programming of the multi-level cell NAND blocks at the calculated pulse number using the data.