Calibration protocol for command and address bus voltage reference in low-swing single-ended signaling

A memory device comprising:

• a command and address (CA) pin;
• a receiver coupled to the CA pin, wherein the receiver is to:
• receive a first signal using a first reference voltage level, the first signal having a first voltage swing and a first signaling frequency;
• subsequent to receiving the first signal, receive a command to calibrate a reference voltage level of the receiver and derive a second reference voltage level that is lower than the first reference voltage level, the receiver to receive a second signal, having a second voltage swing and a second signaling frequency, using the second reference voltage level, wherein the second signaling frequency is higher relative to the first signaling frequency, and wherein the magnitude of the second voltage swing is lower than the magnitude of the first voltage swing;
• and
• wherein the receiver, in response to the command, is to receive signals of a calibration pattern used to derive the second reference voltage level.

A memory device comprising:

• a first set of pins coupled to a command and address (CA) bus;
• and
• a first set of receivers, each receiver of the first set of receivers is coupled to a pin of the first set of pins, wherein the first set of receivers is to:
• receive first signals, having a first voltage swing and a first signaling frequency, while using a first reference voltage level;
• subsequently receive a command to calibrate a reference voltage level of each of the first set of receivers and derive a second reference voltage level that is lower than the first reference voltage level, the first set of receivers to receive second signals, having a second voltage swing and a second signaling frequency, using the second reference voltage level, wherein the second signaling frequency is higher relative to the first signaling frequency, and wherein the magnitude of the second voltage swing is lower than the magnitude of the first voltage swing;
• and
• perform a reference voltage level calibration of each receiver of the first set of receivers to derive the second reference voltage level, wherein the first set of receivers, to perform the reference voltage level calibration, is to receive signals of a calibration pattern.

A method of operating a memory device, the method comprising:

• receiving a first signal, having a first voltage swing and a first signaling frequency, by a receiver using a first reference voltage level;
• subsequently receiving a command to calibrate a reference voltage level of the receiver and deriving a second reference voltage level that is lower than the first reference voltage level;
• receiving a second signal, having a second voltage swing and a second signaling frequency by the receiver using the second reference voltage level, wherein the second signaling frequency is higher relative to the first signaling frequency, and wherein the magnitude of second voltage swing is lower than the magnitude of the first voltage swing;
• and
• performing a reference voltage level calibration of the reference voltage level of the receiver to derive the second reference voltage level, wherein the performing the reference voltage level calibration comprises receiving signals of a calibration pattern used to derive the second reference voltage level.