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AssigneeVersum Materials US, LLC
InventorsJhih Kuei Ge, Yi-Chia Lee, Wen Dar Liu, Chi-Hsien Kuo
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Stripping solutions that may replace an etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes and/or packaging/bumping applications on semiconductor devices for semiconductor integrated circuits with good photoresist removal efficiency and with low silicon oxide etch rate and low metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain polar aprotic solvent, water, hydroxylamine, corrosion inhibitor, quaternary ammonium hydroxide and optional surfactant. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.
A stripper solution for removing a resist from a substrate comprising one or more than one organic solvent, water, hydroxylamine or one or more than one derivative of hydroxylamine, one or more than one corrosion inhibitor, optional one or more than one surfactant, and one or more than one quaternary ammonium hydroxide, wherein the quaternary ammonium hydroxide has the formula:
The stripper solution of any of the preceding claims, wherein the corrosion inhibitor is selected from the group consisting of aromatic hydroxyl compounds, acetylenic alcohols, carboxyl group-containing organic compounds and anhydrides thereof, triazole compounds and imidazole compounds.
A method for removing a resist from a substrate comprising:
Dependencies are inferred from the claim text.