Negative photoresist composition for krf laser, having high resolution and high aspect ratio
AssigneeYoung Chang Chemical Co., Ltd
InventorsSeung Hun LEE, Seung Hyun LEE, Su Jin LEE, Young Cheol CHOI
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Abstract
Disclosed is a negative photoresist composition for a KrF laser, having high resolution and a high aspect ratio and, more particularly, a negative photoresist composition for a KrF laser, which includes a specific additive in order to improve the properties of a conventional negative photoresist, whereby the negative photoresist composition can prevent fine-pattern collapse even using a short-wavelength exposure light source, compared to conventional negative photoresists, and can also exhibit high resolution and a high aspect ratio and is thus suitable for use in semiconductor processing.
Claims4
A negative photoresist composition for a KrF laser, comprising:
- (a) 5 to 60 wt % of a phenol polymer resin;
- (b) 0.1 to 5 wt % of a novolac resin having a weight average molecular weight of 3,000 to 50,000 represented by Chemical Formula 1 below;
- (c) 1 to 10 wt % of a crosslinking agent;
- (d) 0.1 to 10 wt % of a photoacid generator;
- (e) 0.01 to 5 wt % of an acid diffusion inhibitor;
- and
- (f) a remainder of a solvent,
- wherein the phenol polymer resin is obtained from at least one monomer selected from the group consisting of 4-hydroxy-3-methyl benzoic acid, 4-hydroxy-2-methyl benzoic acid, 5-hydroxy-2-methyl benzoic acid, 3,5-di-tert-butyl-4-hydroxy benzoic acid, 4-hydroxy-3,5-dimethyl benzoic acid, 4-hydroxy isophthalic acid, 2,4,6-hydroxy toluene, 2,4,6-trihydroxy benzoic acid monohydrate, and 2,4,6-trihydroxy benzaldehyde:
- in Chemical Formula 1,
- R1 is a methyl group,
- R2 is a hydroxyl group (—OH),
- m is 1 to 9, and
- n is 1 to 9.
Dependencies are inferred from the claim text.