Photoresist composition for deep ultraviolet light patterning method and method of manufacturing semiconductor device

A photoresist composition, the photoresist composition comprising:

• a polymer;
• a photoacid generator;
• a plasma light absorber;
• and
• an organic solvent,
• wherein the plasma light absorber has a structure of Chemical Formula 1:
• where R1 is a C1-C4 alkyl group, a C1-C4 alkoxy group, a carboxyl group, or —RI—COOH (where RI is a C1-C4 alkylenyl group), and
• where R2 is an aldehyde group, —RII—CHO (where RH is a C1-C4 alkylenyl group), a carboxyl group, —RI—COOH (RI is a C1-C4 alkylenyl group), an amine, amide, or acrylic group that is unsubstituted or substituted with a C1-C4 alkyl group, or a C2-C6 acyl group.

A method of manufacturing a semiconductor device comprising:

• forming, on a substrate, a target layer, the target layer comprising at least one dielectric layer;
• forming on the target layer, a layer of a photoresist composition for deep ultraviolet (DUV) light;
• selectively exposing the layer of the photoresist composition for DUV light to krypton fluoride (KrF) laser light through a photo mask;
• forming a photoresist pattern by developing the exposed layer of the photoresist composition;
• and
• patterning the target layer in a plasma environment using the photoresist pattern as an etching mask,
• wherein the photoresist composition for DUV light comprises a plasma light absorber capable of at least partially absorbing light emitted in the plasma environment, and
• wherein the plasma light absorber has a structure of Chemical Formula 1:
• where R1 is a C1-C4 alkyl group, a C1-C4 alkoxy group, a carboxyl group, or —RI—COOH (RI is a C1-C4 alkylenyl group), and where R2 is an aldehyde group, —RI—COOH (where RII is a C1-C4 alkylenyl group), a carboxyl group, —RI—COOH (RI is a C1-C4 alkylenyl group), an amine, amide, or acrylic group that is unsubstituted or substituted with a C1-C4 alkyl group, or a C2-C6 acyl group.