Lithography mask and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYun-Yue LIN
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Abstract
A method of manufacturing a phase shift mask includes forming a doped silicon nitride layer on a mask substrate and forming an opaque layer on the doped silicon nitride layer. The opaque layer and doped silicon nitride layer are then patterned to expose portions of the mask substrate to form a plurality of mask features comprising the opaque layer disposed on the doped silicon nitride layer. Portions of the opaque layer are then removed from some of the mask features.
Claims20
A method of manufacturing a phase shift mask, comprising:
- forming a doped silicon nitride layer on a mask substrate;
- forming an opaque layer on the doped silicon nitride layer;
- patterning the opaque layer and doped silicon nitride layer to expose portions of the mask substrate to form a plurality of mask features comprising the opaque layer disposed on the doped silicon nitride layer;
- and
- removing the opaque layer from some of the mask features.
A method of manufacturing a phase shift mask, comprising:
- forming a first silicon carbonitride or an oxygen rich silicon oxynitride layer on a mask substrate;
- forming a second silicon carbonitride or silicon oxynitride layer on the first silicon carbonitride or oxygen rich silicon oxynitride layer;
- forming an opaque layer on the second silicon carbonitride or silicon oxynitride layer;
- forming a hard mask layer on the opaque layer;
- patterning the hard mask layer, opaque layer, second silicon carbonitride or silicon oxynitride layer, and first silicon carbonitride or an oxygen rich silicon oxynitride layer to expose portions of the mask substrate to form a plurality of mask features comprising the opaque layer disposed on the second silicon carbonitride or silicon oxynitride layer;
- and
- removing the opaque layer from some of the mask features.
A phase shift photomask, comprising:
- a first patterned silicon carbonitride or silicon oxynitride layer comprising a plurality of mask features on a mask substrate;
- and
- an opaque layer disposed on some of the mask features.
Dependencies are inferred from the claim text.