Extreme ultraviolet mask and method of manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYun-Yue LIN
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorYun-Yue LIN
Estimating the term…
A method of manufacturing an extreme ultraviolet mask, including forming a multilayer Mo/Si stack including alternating Mo and Si layers over a first major surface of a mask substrate, and forming a capping layer over the multilayer Mo/Si stack. An absorber layer is formed on the capping layer, and a hard mask layer is formed over the absorber layer. The hard mask layer is patterned to form a hard mask layer pattern. The hard mask layer pattern is extended into the absorber layer to expose the capping layer and form a mask pattern. A border pattern is formed around the mask pattern. The border pattern is extended through the multilayer Mo/Si stack to expose the mask substrate and form a trench surrounding the mask pattern. A passivation layer is formed along sidewalls of the trench.
A method of manufacturing an extreme ultraviolet mask, comprising:
A method of manufacturing an extreme ultraviolet mask, comprising:
An extreme ultraviolet mask, comprising:
Dependencies are inferred from the claim text.