Thermochemical Gas Sensor Using Thermoelectric Thin Film And Method Of Manufacturing The Same

A thermochemical gas sensor, comprising:

• a substrate provided with an insulating layer;
• seed layers provided on the insulating layer;
• a P-type thermoelectric thin film provided on the seed layers;
• an N-type thermoelectric thin film provided on the seed layers and spaced from the P-type thermoelectric thin film;
• electrodes provided on the P-type thermoelectric thin film and the N-type thermoelectric thin film;
• a catalyst layer provided on the electrodes and causing an exothermic reaction when in contact with gas to be sensed;
• and
• electrode wires electrically connected to the electrodes,
• wherein the P-type thermoelectric thin film and the N-type thermoelectric thin film are formed of a material comprising a chalcogenide,
• wherein the chalcogenide comprises one or more chalcogens selected from the group consisting of selenium (Se) and tellurium (Te), and the P-type thermoelectric thin film is formed of a chalcogenide different from a chalcogenide forming the N-type thermoelectric thin film.

A method of manufacturing a thermochemical gas sensor, the method comprising:

• a step of preparing a substrate provided with an insulating layer;
• a step of forming a seed layer on the insulating layer;
• a step of forming a thermoelectric thin film on the seed layer using a wet electrolytic deposition method;
• a step of forming an electrode on the thermoelectric thin film;
• a step of forming an electrode wire electrically connected to the electrode;
• and
• a step of forming a catalyst layer, which causes an exothermic reaction when in contact with gas to be sensed, on the electrode,
• wherein the thermoelectric thin film is formed of a material comprising a chalcogenide,
• wherein the chalcogenide comprises one or more chalcogens selected from the group consisting of selenium (Se) and tellurium (Te).

A method of manufacturing a thermochemical gas sensor, the method comprising:

• a step of preparing a substrate provided with an insulating layer;
• a step of forming seed layers on the insulating layer;
• a step of forming a P-type thermoelectric thin film and an N-type thermoelectric thin film to be spaced from each other on the seed layers using a wet electrolytic deposition method;
• a step of forming electrodes on the P-type thermoelectric thin film and the N-type thermoelectric thin film;
• a step of forming electrode wires electrically connected to the electrodes;
• and
• a step of forming a catalyst layer, which causes an exothermic reaction when in contact with gas to be sensed, on the electrodes,
• wherein the thermoelectric thin film is formed of a material comprising a chalcogenide,
• wherein the chalcogenide comprises one or more chalcogens selected from the group consisting of selenium (Se) and tellurium (Te), and the P-type thermoelectric thin film is formed of a chalcogenide different from a chalcogenide forming the N-type thermoelectric thin film.