Plasma processing apparatus
AssigneeHitachi High-Technologies Corporation
InventorsAkira KAGOSHIMA, Daisuke SHIRAISHI, Yuji NAGATANI
Life of this patent
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Abstract
A plasma processing apparatus, to which process control such as APC is applied, includes: a processing chamber in which plasma processing is performed on a sample; and a plasma processing control device which performs control to optimize a condition for plasma processing which recovers the status inside a processing chamber, in which plasma processing is performed, based on a waiting time from the time when plasma processing for a second lot, which is a lot immediately before a first lot, is completed to the time when plasma processing for the first lot is started, and the content of plasma processing for the second lot.
Claims13
1-15. (canceled)
A plasma processing apparatus comprising:
- a processing chamber in which a sample in a lot, said lot comprising a collection of one or more samples, is plasma-processed using control to reduce a variation in plasma processing with feedback control or feed-forward control;
- and
- a plasma processing control device configured to control to correct a condition for plasma processing for a sample in a first lot based on a waiting time and a content of plasma processing for a second lot, the second lot being a lot for which plasma processing was already performed before the first lot, the waiting time being a time period from a time when plasma processing for the second lot is completed to a time when plasma processing for the first lot is started.
A plasma processing apparatus comprising:
- a processing chamber in which a sample in a lot, said lot comprising a collection of one or more samples, is plasma-processed using control to reduce a variation in plasma processing with feedback control or feed-forward control;
- and
- a plasma processing control device configured to control to select from a plurality of conditions for plasma processing a condition for plasma processing for a sample in a first lot based on a waiting time and a content of plasma processing for a second lot, the second lot being a lot for which plasma processing was already performed before the first lot, the waiting time being a time period from a time when plasma processing for the second lot is completed to a time when plasma processing for the first lot is started.
A plasma processing method comprising:
- plasma-processing a sample in a lot, said lot comprising a collection of one or more samples, in a processing chamber using control to reduce a variation in plasma processing with feedback control or feed-forward control;
- and
- controlling to correct a condition for plasma processing for a sample in a first lot based on a waiting time and a content of plasma processing for a second lot, the second lot being a lot for which plasma processing was already performed before the first lot, the waiting time being a time period from a time when plasma processing for the second lot is completed to a time when plasma processing for the first lot is started.
A plasma processing method comprising:
- plasma-processing a sample in a lot, said lot comprising a collection of one or more samples, in a processing chamber using control to reduce a variation in plasma processing with feedback control or feed-forward control;
- and
- controlling to select from a plurality of conditions for plasma processing a condition for plasma processing for a sample in a first lot based on a waiting time and a content of plasma processing for a second lot, the second lot being a lot for which plasma processing was already performed before the first lot, the waiting time being a time period from a time when plasma processing for the second lot is completed to a time when plasma processing for the first lot is started.
Dependencies are inferred from the claim text.