Dual selective deposition
AssigneeASM IP Holding B.V.
InventorsSuvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
Life of this patent
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Abstract
Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.
Claims22
(canceled)
A method for selectively depositing a first dielectric material on a first dielectric surface of a substrate and a second, different dielectric material on a second surface of the same substrate, wherein the second surface is a conductive surface, a metal surface, or an H-terminated surface, the method comprising:
- selectively depositing the first dielectric material on the first surface of the substrate relative to the second surface by a first vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant;
- and
- selectively depositing the second dielectric material on the second surface relative to the first surface by a second vapor deposition process comprising alternately and sequentially contacting the substrate with a third precursor and a fourth reactant.
A method for selectively depositing two different materials on two different surfaces of a substrate, wherein a first surface is a surface comprising a dielectric material and a second surface is a conductive surface, a metal surface, or an H-terminated surface, the method comprising:
- selectively depositing a first dielectric material on the first surface of the substrate relative to the second surface of the same substrate by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant;
- and
- selectively depositing a second dielectric material on the second surface relative to the first surface by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a third precursor and a fourth reactant,
- wherein the first dielectric material is deposited on the first surface of the substrate relative to the second surface of the substrate with a selectivity of at least about 80%.
Dependencies are inferred from the claim text.