Chemical Mechanical Polishing Composition and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShich-Chang Suen, Kei-Wei Chen, Liang-Guang Chen
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Abstract
An abrasive slurry composition for chemical mechanical planarization/polishing (CMP) is provided. The abrasive slurry includes colloidal alumina, a dispersant, and a pH buffer. The colloidal alumina has a particle size of between about 5 nm and about 100 nm. The colloidal alumina may be alpha phase material having a first hardness of about 9 Mohs, or gamma phase material having a second hardness of about 8 Mohs. The abrasive slurry may further include polyacrylic acid (PAA), a down-force enhancer, or a polish-rate inhibitor.
Claims20
A method comprising:
- introducing a slurry to a chemical mechanical polishing pad, the slurry comprising colloidal alumina;
- and
- polishing a semiconductor device layer with the slurry and the chemical mechanical polishing pad.
A method comprising:
- attaching a semiconductor device wafer to a chemical mechanical planarization (CMP) carrier head;
- introducing a CMP slurry to an exposed surface of the semiconductor device wafer, the CMP slurry comprising colloidal alumina;
- and
- after introducing the CMP slurry, polishing the exposed surface of the semiconductor device wafer.
A chemical mechanical polishing slurry comprising:
- a reactant;
- colloidal alumina;
- and
- a dispersant.
Dependencies are inferred from the claim text.