Plasma processing apparatus

A plasma processing apparatus comprising:

• a chamber configured to accommodate a target substrate;
• a dielectric window forming an upper portion of the chamber;
• a gas supply unit configured to supply a processing gas from an upper portion of the chamber into the chamber;
• an antenna provided above the chamber to surround the gas supply unit and configured to generate plasma of the processing gas in the chamber by supplying a high frequency power into the chamber;
• and
• a power supply unit configured to supply a high frequency power to the antenna,
• wherein the antenna includes:
• an inner coil provided around the gas supply unit to surround the gas supply unit;
• and
• an outer coil provided around the gas supply unit and the inner coil to surround the gas supply unit and the inner coil,
• wherein one of the inner coil and the outer coil is configured such that both ends of a wire forming said one coil are opened;
• power is supplied from the power supply unit to a central point of the wire or a vicinity of the central point of the wire;
• the vicinity of the central point of the wire is grounded;
• and said one coil resonates at a wavelength that is a half of a wavelength of the high frequency power supplied from the power supply unit, and
• the other one of the inner coil and the outer coil is configured such that both ends of a wire forming the other coil are connected through a capacitor and the other coil is inductively coupled with said one coil.