Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus

A method for driving a solid-state imaging device having

• a pixel part in which pixels are arranged, each pixel including a photoelectric converting and reading part and a signal holding part and
• a reading part which reads out pixel signals from the pixel part, wherein
• each pixel includes
• a photoelectric conversion element which accumulates a charge generated by photoelectric conversion in an integration period,
• a transfer element capable of transferring the charge accumulated in the photoelectric conversion element in a transfer period after the integration period,
• an output node to which the charge accumulated in the photoelectric conversion element is transferred through the transfer element,
• an output buffer part which converts the charge at the output node to a voltage signal corresponding to a quantity of the charge and outputs the converted voltage signal,
• a storage transistor connected to the output node,
• a storage capacity element which accumulates the charge at the output node through the storage transistor, and
• a reset element which resets the output node to a predetermined potential in a reset period and wherein
• the signal holding part can hold
• a signal with respect to a voltage signal corresponding to the accumulated charge of the photoelectric conversion element transferred to the output node in the transfer period after the integration period and a signal with respect to a voltage signal corresponding to at least an overflow charge overflowing from the photoelectric conversion element to the output node in any period among the charges in the photoelectric conversion element and the storage capacity element,
• the method for driving a solid-state imaging device comprising:
• when reading out pixel signals of the pixels,
• under control of the reading part,
• performing first comparison processing for outputting a digitalized first comparison result signal with respect to a voltage signal corresponding to the overflow charge overflowing from the photoelectric conversion element to the output node in the integration period and
• performing second comparison processing for outputting a digitalized second comparison result signal with respect to a voltage signal corresponding to the accumulated charge of the photoelectric conversion element transferred to the output node in the transfer period after the integration period.

An electronic apparatus, comprising

• a solid-state imaging device and
• an optical system for forming a subject image in the solid-state imaging device, wherein
• the solid-state imaging device has
• a pixel part in which pixels are arranged, each pixel including a photoelectric converting and reading part and a signal holding part and
• a reading part which reads out pixel signals from the pixel part, wherein
• each pixel includes
• a photoelectric conversion element which accumulates a charge generated by photoelectric conversion in an integration period,
• a transfer element capable of transferring the charge accumulated in the photoelectric conversion element in a transfer period after the integration period,
• an output node to which the charge accumulated in the photoelectric conversion element is transferred through the transfer element,
• an output buffer part which converts the charge at the output node to a voltage signal corresponding to a quantity of the charge and outputs the converted voltage signal,
• a storage transistor connected to the output node,
• a storage capacity element which accumulates the charge at the output node through the storage transistor, and
• a reset element which resets the output node to a predetermined potential in a reset period, and wherein
• the signal holding part can hold
• a signal with respect to a voltage signal corresponding to the accumulated charge of the photoelectric conversion element transferred to the output node in the transfer period after the integration period and
• a signal with respect to a voltage signal corresponding to at least an overflow charge overflowing from the photoelectric conversion element to the output node in any period among the charges in the photoelectric conversion element and in the storage capacity element.