Air-gap type film bulk acoustic resonator and method of manufacturing the same
AssigneeWisol Co., Ltd.
InventorHoan Jun CHOI
Life of this patent
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Abstract
Disclosed is an air gap type film bulk acoustic resonator (FBAR). The air gap type FBAR includes a substrate which includes an air gap portion in a top surface thereof, a lower electrode formed on the substrate, a piezoelectric layer formed on the lower electrode, and an upper electrode formed on the piezoelectric layer. Here, the lower electrode includes a first lower electrode formed spaced apart from the air gap portion in the substrate and a second lower electrode formed on the substrate to be separated from the first lower electrode by being stacked to surround only a part of a top of the air gap portion in order to form a non-deposition area of the air gap portion.
Claims15
An air gap type film bulk acoustic resonator (FBAR) comprising:
- a substrate which comprises an air gap portion in a top surface thereof;
- a lower electrode formed on the substrate;
- a piezoelectric layer formed on the lower electrode;
- and
- an upper electrode formed on the piezoelectric layer,
- wherein the lower electrode comprises:
- a first lower electrode formed spaced apart from the air gap portion in the substrate;
- and
- a second lower electrode formed on the substrate to be separated from the first lower electrode and to include a non-deposition area of the air gap portion by being deposited to surround only a part of a top of the air gap portion.
A method of manufacturing an air gap type FBAR, comprising:
- forming a cavity in a top surface of a substrate and then forming a first sacrificial layer on the cavity;
- forming a lower electrode on the substrate on which the first sacrificial layer is formed;
- forming a piezoelectric layer on the lower electrode;
- forming an upper electrode on the piezoelectric layer;
- and
- forming an air gap portion corresponding to the cavity by removing the first sacrificial layer,
- wherein the forming of the lower electrode comprises forming a first lower electrode in an area of the substrate spaced apart from the air gap portion and forming a second lower electrode on the substrate to be separated from the first lower electrode and to include a non-deposition area with respect to the air gap portion through depositing to surround only a part of a top of the air gap portion.
Dependencies are inferred from the claim text.