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US 2019/0097592 A1Published application
Low parasitic capacitance low noise amplifier
AssigneeQUALCOMM Incorporated
InventorSinan GOKTEPELI
Life of this patent
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Abstract
A low noise amplifier (LNA) device includes a first transistor on a semiconductor on insulator (SOI) layer. The first transistor includes a source region, a drain region, and a gate. The LNA device also includes a first-side gate contact coupled to the gate. The LNA device further includes a second-side source contact coupled to the source region. The LNA device also includes a second-side drain contact coupled to the drain region.
Claims20
A low noise amplifier (LNA) device, comprising:
- a first transistor on a semiconductor on insulator (SOI) layer, the first transistor including a source region, a drain region, and a gate;
- a first-side gate contact coupled to the gate;
- a second-side source contact coupled to the source region;
- and
- a second-side drain contact coupled to the drain region.
2 more elements
A method of constructing a low noise amplifier (LNA) device, comprising:
- fabricating a first transistor on a first surface of an isolation layer supported by a sacrificial substrate, the first transistor comprising a gate coupled to a first-side gate contact;
- depositing a first-side dielectric layer on the first transistor;
- bonding a handle substrate to the first-side dielectric layer;
- removing the sacrificial substrate;
- exposing a second-side of a source region and a second-side of a drain region of the first transistor through a second surface opposite the first surface of the isolation layer;
- depositing a second-side source contact on the second-side of the source region;
- and
- depositing a second-side drain contact on the second-side of the drain region.
5 more elements
A radio frequency (RF) front end module, comprising:
- a low noise amplifier, comprising a first transistor on a semiconductor on insulator (SOI) layer, the first transistor including a source region, a drain region, and a gate, a first-side gate contact coupled to the gate, a second-side source contact coupled to the source region, and a second-side drain contact coupled to the drain region;
- and
- an antenna coupled to an output of the low noise amplifier.
Dependencies are inferred from the claim text.