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US 2019/0097419 A1Published application
Electro-static discharge (esd) protection clamp technology
AssigneeSemiconductor Components Industries, LLC
InventorsMario M. PELELLA, Stephanie Marie BOHAICHUK
Life of this patent
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Abstract
In some implementations, an apparatus can include a semiconductor region including an electrical device and a back-end region disposed on the semiconductor region. The back-end region can include a first terminal and a second terminal. The apparatus can include an insulator-metal transition (IMT) material electrically coupled between the first terminal and the second terminal.
Claims20
An apparatus, comprising:
- a semiconductor region including an electrical device;
- and
- a back-end region disposed on the semiconductor region, the back-end region including:
- a first terminal;
- a second terminal;
- and
- an insulator-metal transition (IMT) material electrically coupled between the first terminal and the second terminal.
4 more elements
An apparatus, comprising:
- a first terminal;
- a second terminal;
- and
- an electro-static discharge (ESD) device electrically coupled between the first terminal and the second terminal, the ESD device including:
- an insulator-metal transition (IMT) material;
- and
- a heat spreader material coupled to the IMT material.
4 more elements
An apparatus, comprising:
- a first terminal;
- a second terminal;
- and
- a first electro-static discharge (ESD) device electrically coupled between the first terminal and the second terminal, the first ESD device including a first insulator-metal transition (IMT) material and included in a first layer of a back-end region of a semiconductor device;
- and
- a second electro-static discharge (ESD) device including a second (IMT) material, the first ESD device being in a second layer of the back-end region of the semiconductor device, the first layer being different than the second layer.
3 more elements
Dependencies are inferred from the claim text.