Laser diode enhancement device
OwnerAlkan Gulses, Russell KURTZinventors
Life of this patent
Estimating the term…
Abstract
The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs.
Claims16
The laser of claim 15, the laser further including a DBR mirror and at least one quantum well in the DBR mirror.
The laser of claim 14 wherein the CGH comprises GaAs/AlGaAs.
(canceled)
The laser of claim 14 wherein there are at least 20 cascaded CGHs.
The laser of claim 14 wherein there are more than 20 cascaded CGHs.
The laser of claim 14 where each CGH comprises GaAs/AlGaAs.
(canceled)
The laser of claim 15 having a laser gain medium that is semiconductor.
The laser of claim 15 having a laser gain medium that is crystal.
The laser of claim 15 having a laser gain medium that is gas.
A vertical cavity surface emitting semiconductor laser, with an intra-cavity wavefront shaping device comprising a plurality of CGHs at one end of the cavity, with each CGH having a plurality of cascaded layers with a buffer layer between each cascaded layer.
A vertical cavity surface emitting semiconductor laser, comprising a plurality of wavefront shaping devices, within a cavity said wavefront shaping devices being diffractive elements consisting of a plurality of interior CGHs at an end of the cavity;
- said CGHs each having a plurality of cascaded layers with a buffer layer between each layer.
Dependencies are inferred from the claim text.