Thin film encapsulation scattering layer by pecvd

A method, comprising:

• depositing a thin film encapsulation structure over a light emitting device in a plasma enhanced chemical vapor deposition chamber, wherein depositing the thin film encapsulation structure comprises:
• depositing a barrier layer on and in physical contact with the light emitting device;
• and
• depositing a light scattering layer on and in physical contact with the barrier layer over the light emitting device, wherein the light scattering layer is deposited by introducing silane gas and ammonia gas into the plasma enhanced chemical vapor deposition chamber, wherein a flow rate of the silane gas is equal to or greater than a flow rate of the ammonia gas.

A method, comprising:

• depositing a thin film encapsulation structure over a light emitting device in a plasma enhanced chemical vapor deposition chamber, wherein depositing the thin film encapsulation structure comprises:
• depositing a light scattering layer on and in physical contact with the light emitting device, wherein the light scattering layer is formed with a major surface having a plurality of bumps;
• depositing a first barrier layer on the light scattering layer;
• depositing a buffer layer over the first barrier layer;
• and
• depositing a second barrier layer over the buffer layer.