Method of manufacturing a semiconductor device and a semiconductor device

A semiconductor device having a gate-all-around field effect transistor, comprising:

• nano-tube structures disposed in a trench formed above a substrate, wherein:
• each of the nano-tube structures includes a carbon nanotube (CNT),
• ends of the nano-tube structures are embedded in an anchor layer,
• a gate structure is constituted by a part of the nano-tube structure, which includes the CNT having a gate dielectric layer wrapping around the CNT and a gate electrode layer over the gate dielectric layer, and
• a source/drain (S/D) is constituted by a part of the nano-tube structure, in which the CNT is exposed and is in direct contact with and wrapped around an S/D electrode layer.

A semiconductor device having a gate-all-around field effect transistor, comprising:

• nano-tube structures disposed in a trench formed above a substrate;
• gate contact layers;
• source/drain contact layers, wherein:
• each of the nano-tube structures includes a carbon nanotube (CNT),
• ends of the nano-tube structures are embedded in an anchor layer,
• a gate structure is constituted by a part of the nano-tube structure, which includes the CNT having a gate dielectric layer wrapping around the CNT and a gate electrode layer over the gate dielectric layer,
• each of source/drains are constituted by a part of the nano-tube structure, in which the CNT is exposed and is in direct contact with and wrapped around an S/D electrode layer disposed in the trench,
• the gate contact layers extend into the trench and contact the gate electrode layer, and
• each of the source/drain contact layers contacts the S/D electrode layer.