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US 2019/0097131 A1Published application
Storage element, storage device, method for manufacturing the same and driving method
AssigneesBeijing Boe Display Technology Co., Ltd., Boe Technology Group Co., Ltd.
InventorsRuiyong WANG, Lianjie QU, Ruizhi YANG, Yang YOU
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Abstract
The present disclosure provides a storage element, a storage device, a method for manufacturing the same and a driving method. The method for manufacturing the storage element includes: providing a substrate; preparing a thin film transistor on the substrate; and preparing a storage functional pattern by using a phase change material, in which the storage functional pattern is connected to a drain electrode of the thin film transistor.
Claims20
A method for manufacturing a storage element, comprising steps of:
- providing a substrate;
- preparing a thin film transistor on the substrate;
- and
- preparing a storage functional pattern by using a phase change material, wherein the storage functional pattern is connected to a drain electrode of the thin film transistor.
1 more element
A storage element, comprising:
- a thin film transistor;
- and
- a storage functional pattern formed of a phase change material, wherein the storage functional pattern is connected to a drain electrode of the thin film transistor.
Dependencies are inferred from the claim text.