Protein-based nonvolatile memory device and method for manufacturing the same
AssigneeResearch & Business Foundation Sungkyunkwan University
InventorsSungjoo LEE, Woo-Seok CHOE, Sung Kyu JANG
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Abstract
In a first aspect of the present disclosure, there is provided a nonvolatile memory device comprising: two electrodes; and a protein switching layer interposed between the two electrodes and including an amino acid, wherein then a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament, wherein the formation of the conductive filament allows a resistance state of the device to vary.
Claims14
A nonvolatile memory device comprising:
- two electrodes;
- and
- a protein switching layer interposed between the two electrodes and including an amino acid,
- wherein when a voltage is applied to one of the electrodes, the amino acid chelates with an active electrode material to form a conductive filament,
- wherein a resistance state of the protein switching layer is variable through formation of the conductive filament.
A method for manufacturing a nonvolatile memory device, the method comprising:
- providing a base substrate;
- disposing at least one electrode on the substrate;
- and
- forming a protein switching layer on the electrode using a protein solution containing a protein therein, wherein the protein includes an amino acid,
- wherein then a voltage is applied to the electrode, the amino acid chelates with an active electrode material to form a conductive filament,
- wherein the formation of the conductive filament allows a resistance state of the device to vary.
Dependencies are inferred from the claim text.