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US 2019/0097124 A1Published application
Magnetoresistive random access memory device
AssigneeSamsung Electronics Co., Ltd.
InventorsJoon-Myoung LEE, Ju-Hyun KIM, Jung-Hwan PARK, Se-Chung OH, Young-Man JANG
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Abstract
An MRAM device includes a lower electrode, a blocking pattern on the lower electrode and including a binary metal boride in an amorphous state, a seed pattern on the blocking pattern and including a metal, an MTJ structure on the seed pattern, and an upper electrode on the MTJ structure.
Claims23
An MRAM device comprising:
- a lower electrode;
- a blocking pattern on the lower electrode, the blocking pattern including a binary metal boride in an amorphous state;
- a seed pattern on the blocking pattern, the seed pattern including a metal;
- an MTJ structure on the seed pattern;
- and
- an upper electrode on the MTJ structure.
3 more elements
An MRAM device comprising:
- a lower electrode;
- a blocking pattern on the lower electrode, the blocking pattern including a first metal boride that is formed by combining a first metal and boron;
- a seed pattern on the blocking pattern, the seed pattern including a second metal;
- an MTJ structure on the seed pattern;
- and
- an upper electrode on the MTJ structure,
- wherein a formation energy of the first metal boride is less than a formation energy of a second metal boride that is formed by combining a second metal and boron.
4 more elements
(canceled)
(canceled)
An MRAM device comprising:
- a lower electrode;
- a blocking pattern on the lower electrode, the blocking pattern including a ternary metal boron nitride in an amorphous state;
- a seed pattern on the blocking pattern, the seed pattern including a metal;
- an MTJ structure on the seed pattern;
- and
- an upper electrode on the MTJ structure.
3 more elements
23-33. (canceled)
Dependencies are inferred from the claim text.