Piezoelectric film, piezoelectric element, and method for manufacturing piezoelectric film
AssigneeFUJIFILM Corporation
InventorsDaigo SAWAKI, Naoki MURAKAMI
Life of this patent
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Abstract
Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pba[(ZrxTi1-x)1-yNby]bO3 wherein 0<x<1, and 0.10≤y<0.13, in which in a case where a ratio I(200)/I(100) of a diffraction peak intensity I(200) from a perovskite (200) plane with respect to a diffraction peak intensity I(100) from a perovskite (100) plane, as measured by an X-ray diffraction method, is r, and a/b is q, 0.28r+0.9≤q≤0.32r+0.95, 1.10≤q≤1.25, and r≤1.00 are satisfied.
Claims6
A piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula:
- Pba[(ZrxTi1-x)1-yNby]bO3
- wherein 0<x<1, and 0.10≤y<0.13, and
- wherein, in a case where a ratio I(200)/I(100) of a diffraction peak intensity I(200) from a perovskite (200) plane with respect to a diffraction peak intensity I(100) from a perovskite (100) plane, as measured by an X-ray diffraction method, is r, and a/b is q, the following relationships are satisfied:
- 0.28r+0.9≤q≤0.32r+0.95,
- 1.10≤q, and
- r≤1.00.
Dependencies are inferred from the claim text.