Production process for a thermoelectric device
OwnerRüdiger Spillner, Jan Horzellainventors
Life of this patent
Estimating the term…
Abstract
The present teachings relates to a manufacturing method for a thermoelectric device having the steps: providing a first carrier layer which is made of a metal or a metal alloy in at least some sections; providing a first dielectric oxide layer on the surface of the first carrier layer, providing a first electrically conductive bridge layer on the first dielectric oxide layer and arranging a plurality of differently doped semiconductors on the first electrically conductive bridge layer such that the semiconductors are each electrically connected to the first bridge layer on the first side.
Claims20
A manufacturing method for a thermoelectric device, having the steps:
- providing a first carrier layer which is made of a metal or metal alloy in at least some sections;
- providing a first dielectric oxide layer on a surface of the first carrier layer;
- providing a first electrically conductive bridge layer on the first dielectric oxide layer;
- and
- arranging a plurality of differently doped semiconductors on the first electrically conductive bridge layer so that the semiconductors are each electrically connected to the first electrically conductive bridge layer on a first side.
A thermoelectric device comprising:
- a first carrier layer which is made of metal or a metal alloy in at least some sections;
- a first dielectric oxide layer on a surface of the first carrier layer;
- a first electrically conductive bridge layer on a first dielectric oxide layer;
- and
- a plurality of differently doped semiconductors on the first electrically conductive bridge layer,
- wherein the semiconductors are arranged in such a way that the semiconductors are each electrically connected to the first electrically conductive bridge layer on a first side.
Dependencies are inferred from the claim text.